High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique
نویسندگان
چکیده
منابع مشابه
The form of etch rate minima in wet chemical anisotropic etching of silicon
Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch rate crystallographically oriented along 〈111〉. The details of the form of the minimum (angular dependence of the etch rate) are investigated and discussed in a framework of steps originating from spontaneous nucleation and from misorientation of the crystal face exposed to the etchant. As a resul...
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A new model is proposed that explains the anisotropy of the etch rate of single crystalline silicon in certain etchants. It is inspired from theories of crystal growth. We assume that the ( l l l ) face is flat on an atomic scale. Then the etch rate should be governed by a nucleation barrier of one atomic layer deep cavities. The origin of the nucleation barrier is that the formation of a too s...
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We report low-loss silicon waveguides and efficient grating coupler to couple light into them. By using anisotropic wet etching technique, we reduced the side wall roughness down to 1.2 nm. The waveguides were patterned along the [112] direction on a [110] silicon-on-insulator substrate. The waveguide boundaries are decided by the [111] planes, which are normal to the [110] surface. Fabricated ...
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Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737
DOI: 10.1149/1.2357269